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features ? single 2.5v - 3.6v or 2.7v - 3.6v supply serial peripheral interface (spi) compatible 20 mhz max clock frequency page program operation ? single cycle reprogram (erase and program) ? 4096 pages (264 bytes/page) main memory supports page and block erase operations two 264-byte sram data buffer s ? allows receiving of data while reprogramming of nonvolatile memory continuous read capabilit y through entire array ? ideal for code shadowing applications low power dissipation ? 4 ma active read current typical ? 2 a cmos standby current typical hardware data protection feature 100% compatible to at45db081 and at45db081a 5.0v-tolerant inputs: si, sck, cs , reset and wp pins commercial and industrial temperature ranges green (pb/halide-free) packaging options description the at45db081b is a 2.5-volt or 2.7-volt only, serial interface flash memory ideally suited for a wide variety of digital voice-, image-, program code- and data-storage applications. its 8,650,752 bits of memory are organized as 4096 pages of 264 bytes each. in addition to the main memory, the at45db081b also contains two sram data buffers of 264 bytes each. the buffers allow receiving of data while a page in the main memory is being reprogrammed, as well as writing a continuous data stream. 8-megabit 2.5-volt only or 2.7-volt only dataflash ? at45db081b for new designs use at45db081d tsop top view ty p e 1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 rdy/busy reset wp nc nc vcc gnd nc nc nc cs sck si so nc nc nc nc nc nc nc nc nc nc nc nc nc nc cbga top view through package a b c d e 12 3 nc vcc wp reset nc nc gnd rdy/bsy si nc sck cs so nc soic 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 gnd nc nc cs sck si so nc nc nc nc nc nc nc vcc nc nc wp reset rdy/busy nc nc nc nc nc nc nc nc pin configurations pin name function cs chip select sck serial clock si serial input so serial output wp hardware page write protect pin reset chip reset rdy/busy ready/busy rev. 2225j?dflsh?2/08 cason top view through package si sck reset cs so gnd vcc wp 8 7 6 5 1 2 3 4
2 2225j?dflsh?2/08 at45db081b eeprom emulation (bit or byte alterability) is easily handled with a self-contained three step read-modify-write operation. unlike conventional flash memories that are accessed randomly with multiple address lines and a parallel interface, the dataflash uses a spi serial interface to sequentially access its data. datafl ash supports spi mode 0 and mode 3. the simple serial interface fa cilitates hardware layout, increases system reliability, minimizes switching noise, and reduces package size and active pin count. the device is optimized for use in many commercial and industrial applications where high density, low pin count, low voltage, an d low power are essential. the device oper- ates at clock frequencies up to 20 mhz with a typical active read current consumption of 4 ma. to allow for simple in-system reprogramm ability, the at45db081b does not require high input voltages for programming. the device operates from a single power supply, 2.5v to 3.6v or 2.7v to 3.6v, for both the program and read operations. the at45db081b is enabled throu gh the chip select pin (cs ) and accessed via a three-wire interface consisting of the serial input (si) , serial output (so), and the serial clock (sck). all programming cycles are self-timed, and no separate erase cycle is required before programming. when the device is shipped from atmel, the most significant page of the memory array may not be erased. in other words, the conten ts of the last page may not be filled with ffh. block diagram memory array to provide optimal flexibility, the memory a rray of the at45db081b is divided into three levels of granularity comprising of sector s, blocks, and pages. the memory architecture diagram illustrates the breakdown of each level and details the number of pages per sector and block. all program operations to the dataflash occur on a page-by-page basis; however, the optional erase operati ons can be performed at the block or page level. flash memory array page (264 bytes) buffer 2 (264 bytes) buffer 1 (264 bytes) i/o interface sck cs reset vcc gnd rdy/busy wp so si
3 2225j?dflsh?2/08 at45db081b memory architecture diagram device operation the device operation is controlled by instructions from the host processor. the list of instructions and their associated opcodes are contained in tabl es 1 through 4. a valid instruction starts with the falling edge of cs followed by the appropriate 8-bit opcode and the desired buffer or main memory address location. while the cs pin is low, toggling the sck pin controls the loading of the opcode and the desired buffer or main memory address location through the si (serial input) pin. all instructions, addresses and data are transf erred with the most significant bit (msb) first. buffer addressing is referenced in the datash eet using the terminology bfa8 - bfa0 to denote the nine address bits required to designate a byte address within a buffer. main memory addressing is referenced using the term inology pa11 - pa0 and ba8 - ba0 where pa11 - pa0 denotes the 12 address bits required to des ignate a page address and ba8 - ba0 denotes the nine address bits required to desig nate a byte address within the page. read commands by specifying the appropriate op code, data can be read from th e main memory or from either one of the two data buffers. the dataflash suppor ts two categories of read modes in relation to the sck signal. the differences between the modes are in respect to the inactive state of the sck signal as well as which clock cycle data w ill begin to be output. the two categories, which are comprised of four modes total, are defined as inactive clock polarity low or inactive clock polarity high and spi mode 0 or spi mode 3. a separate opcode (refer to table 1 on page 10 for a complete list) is used to select which category will be used for reading. please refer to the ?detailed bit-level read timing? di agrams in this datasheet for details on the clock cycle sequences for each mode. continuous array read: by supplying an initial starting address for the main memory array, the continuous array read command can be utilized to sequentially read a continuous stream of data from the device by simply pr oviding a clock signal; no additional addressing information or control signals need to be prov ided. the dataflash incorporates an internal address counter that will automa tically increment on every clock cycle, allowing one continuous read operation without the need of additional address sequences. to perform a continuous read, an opcode of 68h or e8h must be clocked into the device followed by 24 address bits and 32 don?t care bits. the first three bits of t he 24-bit address sequence are reserved for upward and sector 0 = 8 pages 2112 bytes (2k + 64) sector 1 = 248 pages 65,472 bytes (62k + 1984) block = 2112 bytes (2k + 64) 8 pages sector 0 sector 1 page = 264 bytes (256 + 8) page 0 page 1 page 6 page 7 page 8 page 9 page 4094 page 4095 block 0 page 14 page 15 page 16 page 17 page 18 page 4093 block 1 sector architecture block architecture page architecture block 0 block 1 block 30 block 31 block 32 block 33 block 510 block 511 block 62 block 63 block 64 block 65 sector 2 sector 8 = 512 pages 135,168 bytes (128k + 4k) block 2 sector 2 = 256 pages 67,584 bytes (64k + 2k) sector 3 = 512 pages 135,168 bytes (128k + 4k) sector 4 = 512 pages 135,168 bytes (128k + 4k) sector 9 = 512 pages 135,168 bytes (128k + 4k)
4 2225j?dflsh?2/08 at45db081b downward compatibility to larger and smal ler density devices (see notes under ?command sequence for read/write operations? diagram). t he next 12 address bits (pa11 - pa0) specify which page of the main memory array to read, a nd the last nine bits (ba8 - ba0) of the 24-bit address sequence specify the starting byte addre ss within the page. the 32 don?t care bits that follow the 24 address bits are needed to initia lize the read operation. following the 32 don?t care bits, additional clock pulses on the sck pin will result in serial data being output on the so (serial output) pin. the cs pin must remain low during the loading of the opcode, the address bits, the don?t care bits, and the reading of data. when the end of a page in main memory is reached during a con- tinuous array read, the device will continue reading at the beginning of the next page with no delays incurred during the page boundary crossover (the crossove r from the end of one page to the beginning of the next page). when the last bit in the main memory array has been read, the device will continue reading back at the beginni ng of the first page of memory. as with crossing over page boundaries, no delays will be incurred when wrapping around from the end of the array to the beginni ng of the array. a low-to-high transition on the cs pin will terminate the read oper ation and tri-state the so pin. the maximum sck frequency allowable for the continuous array read is defined by the f car specification. the continuous array read bypa sses both data buffers and leaves the contents of the buffers unchanged. main memory page read: a main memory page read allows the user to read data directly from any one of the 4096 pages in the main memory, bypassing both of the data buffers and leaving the contents of the buffers unchanged. to start a page read, an opcode of 52h or d2h must be clocked into the device followed by 24 address bits and 32 don?t care bits. the first three bits of the 24-bit address sequence are reserved bits, the next 12 address bits (pa11 - pa0) specify the page address, and the next nine address bits (ba8 - ba0) specify the starting byte address within the page. the 32 don?t care bits which follow the 24 address bits are sent to initialize the read operation. following the 32 don? t care bits, additional pulses on sck result in serial data being output on the so (serial output) pin. the cs pin must remain low during the loading of the opcode, the address bits, the don?t care bits, and the reading of data. when the end of a page in main memory is reached dur ing a main memory page read, the device will continue reading at the beginning of the sa me page. a low-to-high transition on the cs pin will terminate the read operation and tri-state the so pin. buffer read: data can be read from either one of th e two buffers, using different opcodes to specify which buffer to read from. an opcode of 54h or d4h is used to read data from buffer 1, and an opcode of 56h or d6h is used to read dat a from buffer 2. to perform a buffer read, the eight bits of the opcode must be followed by 15 d on?t care bits, nine address bits, and eight don?t care bits. since the buffer size is 264 bytes, nine address bits (bfa8 - bfa0) are required to specify the first byte of data to be read from the buffer. the cs pin must remain low during the loading of the opcode, the address bits, the don?t care bits, and the reading of data. when the end of a buffer is reached, the device will contin ue reading back at the beginning of the buffer. a low-to-high transition on the cs pin will terminate the read opera tion and tri-state the so pin. status register read: the status register can be used to determine the device?s ready/busy status, the result of a main memory page to buffer compare operation, or the device density. to read the status register, an opcode of 57h or d7h must be loaded into the device. after the last bit of the op code is shifted in, the eight bits of the status register, starting with the msb (bit 7), will be shi fted out on the so pin during the next eight clock cycles. the five most significant bits of the status register w ill contain device information, while the remaining three least-significant bits are reserved for futu re use and will have undef ined values. after bit 0 of the status register has been shifted out, the sequence will repeat itself (as long as cs remains
5 2225j?dflsh?2/08 at45db081b low and sck is being toggled) starting again with bit 7. the data in the status register is con- stantly updated, so each repeati ng sequence will output new data. ready/busy status is indicated using bit 7 of the st atus register. if bit 7 is a 1, then the device is not busy and is ready to accept the next command. if bit 7 is a 0, then the device is in a busy state. the user can continuously poll bit 7 of the status register by stopping sck at a low level once bit 7 has been output. the status of bit 7 w ill continue to be output on the so pin, and once the device is no longer busy, the state of so will change from 0 to 1. there are eight operations which can cause the device to be in a busy stat e: main memory page to buffer transfer, main memory page to buffer compare, buffer to main memory page program with built-in erase, buffer to main memory page program without built-in erase, page erase, block erase, main memory page program, and auto page rewrite. the result of the most recent main memory page to buffer compare operation is indicated using bit 6 of the status register. if bit 6 is a 0, t hen the data in the main memory page matches the data in the buffer. if bit 6 is a 1, then at leas t one bit of the data in the main memory page does not match the data in the buffer. the device density is indicated using bits 5, 4, 3 and 2 of the status register. for the at45db081b, the four bits are 1, 0, 0 and 1. the decimal value of these four binary bits does not equate to the device density; the three bits represent a combinational code relating to differ- ing densities of serial dataflash devices, a llowing a total of sixteen different density configurations. program and erase commands buffer write: data can be shifted in from the si pin into either buffer 1 or buffer 2. to load data into either buffer, an 8- bit opcode, 84h for buffer 1 or 87h for buffer 2, must be followed by 15 don?t care bits and nine address bits (bfa8 - bfa0). the nine address bits specify the first byte in the buffer to be written. the data is ent ered following the address bits. if the end of the data buffer is reached, the device will wrap arou nd back to the beginning of the buffer. data will continue to be loaded into the buffer until a low-to-high transiti on is detected on the cs pin. buffer to main memory page program with built-in erase: data written into either buffer 1 or buffer 2 can be programmed into the main memory. to start the operation, an 8-bit opcode, 83h for buffer 1 or 86h for buffer 2, must be followed by the three reserved bits, 12 address bits (pa11 - pa0) that specify the page in the main memory to be written, and nine addi- tional don?t care bits. when a low-to -high transition occurs on the cs pin, the part will first erase the selected page in main memory to all 1s and then program the data stored in the buffer into the specified page in the main memory. both the erase and the programming of the page are internally self-timed and should ta ke place in a maximum time of t ep . during this time, the status register will indicate that the part is busy. buffer to main memory page program without built-in erase: a previously erased page within main memory can be program med with the contents of either buffer 1 or buffer 2. to start the operation, an 8-bit opcode, 88h for buffer 1 or 89h for buffer 2, must be fol- lowed by the three reserved bits, 12 address bits (pa11 - pa0) that specify the page in the main memory to be written, and nine ad ditional don?t care bits. when a low-to-high transition occurs on the cs pin, the part will program the data stored in the buffer into the specified page in the main memory. it is necessary th at the page in main memory that is being programmed has been previously erased. the programming of the page is internally self-timed and should take place in a maximum time of t p . during this time, the status register will indicate that the part is busy. status register format bit 7 bit 6 bit 5 bit 4 bit 3 bit 2 bit 1 bit 0 rdy/busy comp1001xx
6 2225j?dflsh?2/08 at45db081b successive page programming operations wit hout doing a page erase are not recommended. in other words, changing bytes with in a page from a ?1? to a ?0? during multiple page programming operations without erasing th at page is not recommended. page erase: the optional page erase command can be used to individually erase any page in the main memory array allowing the buffer to main memory page program without built-in erase command to be utilized at a later time. to perform a page erase, an opcode of 81h must be loaded into the device, followed by three reserved bits, 12 address bits (pa11 - pa0), and nine don?t care bits. the 12 address bits are us ed to specify which page of the memory array is to be erased. when a low-to-hig h transition occurs on the cs pin, the part will erase the selected page to 1s. the erase operation is internally se lf-timed and should take place in a maximum time of t pe . during this time, the status register will indicate that the part is busy. block erase: a block of eight pages can be erased at one time allowing the buffer to main memory page program without built-in erase co mmand to be utilized to reduce programming times when writing large amounts of data to the device. to perform a block erase, an opcode of 50h must be loaded into the device, followed by three reserved bits , nine address bits (pa11 - pa3), and 12 don?t care bits. the nine address bits are used to specify which block of eight pages is to be erased. when a low-to-high transition occurs on the cs pin, the part will erase the selected block of eight pages to 1s. the erase ope ration is internally self-timed and should take place in a maximum time of t be . during this time, the status regist er will indicate that the part is busy. main memory page program through buffer: this operation is a combination of the buffer write and buffer to main memory page pr ogram with built-in erase operations. data is first shifted into buffer 1 or buffer 2 from the si pin and then programmed into a specified page in the main memory. to initiate the operation, an 8- bit opcode, 82h for buffe r 1 or 85h for buffer 2, must be followed by the three reserved bits and 21 address bits. the 12 most significant address bits (pa11 - pa0) select the page in the main me mory where data is to be written, and the next nine address bits (bfa8 - bfa0) select the first byte in the buffer to be written. after all address bits are shifted in, the part will take data from t he si pin and store it in one of the data buffers. if the end of the buffer is reached, the device will wrap around back to the beginning of the buffer. when there is a low-to-high transition on the cs pin, the part will first erase the selected page in main memory to all 1s and then program the data stored in the buffer into the specified page in the main memory. both the erase and the program ming of the page are internally self-timed and block erase addressing pa 11 pa 10 pa9 pa 8 pa7 pa6 pa5 pa4 pa 3 pa2 pa 1 pa0 b lo ck 0 0 0000000xxx 0 0 0 0000001xxx 1 0 0 0000010xxx 2 0 0 0000011xxx 3 1 1 1111100xxx508 1 1 1111101xxx509 1 1 1111110xxx510 1 1 1111111xxx511
7 2225j?dflsh?2/08 at45db081b should take place in a maximum of time t ep . during this time, the status register will indi- cate that the part is busy. additional commands main memory page to buffer transfer: a page of data can be transferred from the main memory to either buffer 1 or buffer 2. to start the operation, an 8-bit opcode, 53h for buffer 1 and 55h for buffer 2, must be followed by the three reserved bits, 12 address bits (pa11 - pa0) which specif y the page in main memory that is to be transferred, and nine don?t care bits. the cs pin must be low while toggling the sck pin to load the opcode, the address bits, and the don? t care bits from the si pin. the transfer of the page of data from the main me mory to the buffer will begin when the cs pin tran- sitions from a low to a high state. du ring the transfer of a page of data (t xfr ), the status register can be read to determine whether the transfer has be en completed or not. main memory page to buffer compare: a page of data in main memory can be compared to the data in buffer 1 or buffe r 2. to initiate the operation, an 8-bit opcode, 60h for buffer 1 and 61h for buffer 2, must be followed by 24 address bits consisting of the three reserved bits, 12 address bits (p a11 - pa0) which specify the page in the main memory that is to be compared to th e buffer, and nine don?t care bits. the cs pin must be low while toggling the sck pin to load the opcode, the address bits, and the don?t care bits from the si pin. on the low-to-high transition of the cs pin, the 264 bytes in the selected main memory page will be compared with the 264 bytes in buffer 1 or buffer 2. during this time (t xfr ), the status register will indicate that the part is busy. on comple- tion of the compare operation, bit 6 of the status register is updated with the result of the compare. auto page rewrite: this mode is only needed if multiple bytes within a page or multiple pages of data are modified in a rando m fashion. this mode is a combination of two operations: main memory page to buffer transfer and buffer to main memory page program with built-in erase. a page of data is first transferred from the main memory to buffer 1 or buffer 2, and then the same da ta (from buffer 1 or buffer 2) is programmed back into its original page of main memory. to start the rewrite operation, an 8-bit opcode, 58h for buffer 1 or 59h for buffer 2, must be followed by the three reserved bits, 12 address bits (pa11 - pa0) that specify the page in main memory to be rewritten, and nine additional don?t care bits. when a low-to-high transition occurs on the cs pin, the part will first transfer data from the page in main memory to a buffer and then program the data from the buffer back into same page of main memory. the operation is inter- nally self-timed and should take place in a maximum time of t ep . during this time, the status register will indicate that the part is busy.
8 2225j?dflsh?2/08 at45db081b if a sector is programmed or reprogrammed sequ entially page-by-page, then the programming algorithm shown in figure 1 on pa ge 26 is recommended. otherwise, if multiple bytes in a page or several pages are programmed randomly in a sector, then the programming algorithm shown in figure 2 on pa ge 27 is recommended. each page within a sec- tor must be updated/rewritten at least once within every 10,000 cumulative page erase/program operations in that sector. operation mode summary the modes described can be separated into two groups ? modes which make use of the flash memory array (group a) and modes which do not make use of the flash memory array (group b). group a modes consist of: 1. main memory page read 2. main memory page to buffer 1 (or 2) transfer 3. main memory page to buffer 1 (or 2) compare 4. buffer 1 (or 2) to main memory page program with built-in erase 5. buffer 1 (or 2) to main memory page program without built-in erase 6. page erase 7. block erase 8. main memory page program through buffer 9. auto page rewrite group b modes consist of: 1. buffer 1 (or 2) read 2. buffer 1 (or 2) write 3. status register read if a group a mode is in progress (not fully co mpleted) then another mode in group a should not be started. however, during this time in which a group a mode is in progress, modes in group b can be started. this gives the serial dataflash the ability to virtually accommodate a continuous data stream. while data is being programmed into main memory from buffer 1, data can be loaded into buffer 2 (or vice versa). see application note an-4 (?us ing atmel?s serial dataflash?) for more details. pin descriptions serial input (si): the si pin is an input-only pin and is used to shift data into the device. the si pin is used for all data input in cluding opcodes and address sequences. serial output (so): the so pin is an output-only pin and is used to shift data out from the device. serial clock (sck): the sck pin is an input-only pin and is used to control the flow of data to and from the dataflash. data is always cloc ked into the device on the rising edge of sck and clocked out of the device on the falling edge of sck. chip select (cs ): the dataflash is selected when the cs pin is low. when the device is not selected, data will not be accepted on the si pin, and the so pin will remain in a high-impedance state. a high-to-low transition on the cs pin is required to start an operation, and a low-to-high transition on the cs pin is required to end an operation.
9 2225j?dflsh?2/08 at45db081b write protect: if the wp pin is held low, the first 256 pages of the main memory cannot be reprogrammed. the only way to reprogram the firs t 256 pages is to first dr ive the protect pin high and then use the program commands previously mentioned. if this pin and feature are not uti- lized it is recommended that the wp pin be driven high externally. reset : a low state on the reset pin (reset ) will terminate the operation in progress and reset the internal state machine to an idle state. the device will remain in the reset condition as long as a low level is present on the reset pin. normal operation can resume once the reset pin is brought back to a high level. the device incorporates an inter nal power-on reset circuit, so there are no restrictions on the reset pin during power-on sequences. if this pin a nd feature are not utiliz ed it is recommended that the reset pin be driven high externally. ready/busy : this open drain output pin will be driven low when the device is busy in an inter- nally self-timed operation. this pin, which is normally in a high state (through a 1 k ? external pull-up resistor), will be pulled low during programming operations, compare operations, and during page-to-buffer transfers. the busy status indicates that the flash memo ry array and one of the buffers cannot be accessed; read and write operations to the other buffer can still be performed. power-on/reset state when power is first applied to the device, or w hen recovering from a reset condition, the device will default to spi mode 3. in addition, the so pin will be in a high-impedance state, and a high- to-low transition on the cs pin will be required to start a va lid instruction. the spi mode will be automatically selected on every falling edge of cs by sampling the inactive clock state. after power is applied and v cc is at the minimum datasheet va lue, the system should wait 20 ms before an operational mode is started.
10 2225j?dflsh?2/08 at45db081b note: in tables 2 and 3, an sck mode designat ion of ?any? denotes any one of the four modes of operation (inactive clock polarit y low, inactive clock polarity high , spi mode 0, or spi mode 3). table 1. read commands command sck mode opcode continuous array read inactive clock polarity low or high 68h spi mode 0 or 3 e8h main memory page read inactive clock polarity low or high 52h spi mode 0 or 3 d2h buffer 1 read inactive clock polarity low or high 54h spi mode 0 or 3 d4h buffer 2 read inactive clock polarity low or high 56h spi mode 0 or 3 d6h status register read inactive clock polarity low or high 57h spi mode 0 or 3 d7h table 2. program and erase commands command sck mode opcode buffer 1 write any 84h buffer 2 write any 87h buffer 1 to main memory page pr ogram with built-in erase any 83h buffer 2 to main memory page pr ogram with built-in erase any 86h buffer 1 to main memory page pr ogram without built-in erase any 88h buffer 2 to main memory page pr ogram without built-in erase any 89h page erase any 81h block erase any 50h main memory page program through buffer 1 any 82h main memory page program through buffer 2 any 85h table 3. additional commands command sck mode opcode main memory page to buffer 1 transfer any 53h main memory page to buffer 2 transfer any 55h main memory page to buffer 1 compare any 60h main memory page to buffer 2 compare any 61h auto page rewrite through buffer 1 any 58h auto page rewrite through buffer 2 any 59h
11 2225j?dflsh?2/08 at45db081b note: r = reserved bit p = page address bit b = byte/buffer address bit x = don?t care table 4. detailed bit-level addressing sequence opcode opcode address byte address byte address byte additional don?t care bytes required 50h 01010000r r r ppppppppp xxxxxxxxxxxx n/a 52h 01010010r r r ppppppppppppbbbbbbbbb 4 bytes 53h 01010011r r r pppppppppppp xxxxxxxxx n/a 54h 01010100xxxxxxxxxxxxxxx bbbbbbbbb 1 byte 55h 01010101r r r pppppppppppp xxxxxxxxx n/a 56h 01010110xxxxxxxxxxxxxxx bbbbbbbbb 1 byte 57h 01010111 n/a n/a n/a n/a 58h 01011000r r r pppppppppppp xxxxxxxxx n/a 59h 01011001r r r pppppppppppp xxxxxxxxx n/a 60h 01100000r r r pppppppppppp xxxxxxxxx n/a 61h 01100001r r r pppppppppppp xxxxxxxxx n/a 68h 01101000r r r ppppppppppppbbbbbbbbb 4 bytes 81h 10000001r r r pppppppppppp xxxxxxxxx n/a 82h 10000010r r r ppppppppppppbbbbbbbbb n/a 83h 10000011r r r pppppppppppp xxxxxxxxx n/a 84h 10000100xxxxxxxxxxxxxxx bbbbbbbbb n/a 85h 10000101r r r ppppppppppppbbbbbbbbb n/a 86h 10000110r r r pppppppppppp xxxxxxxxx n/a 87h 10000111xxxxxxxxxxxxxxx bbbbbbbbb n/a 88h 10001000r r r pppppppppppp xxxxxxxxx n/a 89h 10001001r r r pppppppppppp xxxxxxxxx n/a d2h 11010010r r r ppppppppppppbbbbbbbbb 4 bytes d4h 11010100xxxxxxxxxxxxxxx bbbbbbbbb 1 byte d6h 11010110xxxxxxxxxxxxxxx bbbbbbbbb 1 byte d7h 11010111 n/a n/a n/a n/a e8h 11101000r r r ppppppppppppbbbbbbbbb 4 bytes r eserve d r eserve d r eserve d pa 11 pa10 pa 9 pa 8 pa 7 pa 6 pa 5 pa 4 pa 3 pa 2 pa 1 pa 0 ba8 ba 7 ba 6 ba 5 ba 4 ba 3 ba 2 ba 1 ba 0
12 2225j?dflsh?2/08 at45db081b note: 1. after power is applied and v cc is at the minimum specified datasheet value, the system should wait 20 ms before an opera- tional mode is started. note: 1. i cc1 during a buffer read is 20ma maximum. absolute maximum ratings* temperature under bias .................... ........... -55 c to +125 c *notice: stresses beyond those listed under ?absolute maximum ratings? may cause permanent dam- age to the device. this is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of th is specification is not implied. exposure to absolute maximum rating conditions for extended pe riods may affect device reliability. storage temperature .... ..................... ........... -65 c to +150 c all input voltages (including nc pins) with respect to ground ........... ........................-0 .6v to +6.25v all output voltages with respect to ground ....... ......................-0.6v to v cc + 0.6v dc and ac operating range at45db081b (2.5v version) at45db081b operating temperature (case) com. 0 c to 70 c0 c to 70 c ind. ? -40 c to 85 c v cc power supply (1) 2.5v to 3.6v 2.7v to 3.6v dc characteristics symbol parameter condition min typ max units i sb standby current cs , reset , wp = v cc , all inputs at cmos levels 210a i cc1 (1) active current, read operation f = 20 mhz; i out = 0 ma; v cc = 3.6v 410ma i cc2 active current, program/erase operation v cc = 3.6v 15 35 ma i li input load current v in = cmos levels 1 a i lo output leakage current v i/o = cmos levels 1 a v il input low voltage 0.6 v v ih input high voltage 2.0 v v ol output low voltage i ol = 1.6 ma; v cc = 2.7v 0.4 v v oh output high voltage i oh = -100 a v cc - 0.2v v
13 2225j?dflsh?2/08 at45db081b ac characteristics symbol parameter at45db081b (2.5v version) at45db081b units min max min max f sck sck frequency 15 20 mhz f car sck frequency for continuous array read 15 20 mhz t wh sck high time 30 22 ns t wl sck low time 30 22 ns t cs minimum cs high time 250 250 ns t css cs setup time 250 250 ns t csh cs hold time 250 250 ns t csb cs high to rdy/busy low 200 200 ns t su data in setup time 10 5 ns t h data in hold time 15 10 ns t ho output hold time 0 0 ns t dis output disable time 20 18 ns t v output valid 25 20 ns t xfr page to buffer transfer/compare time 300 250 s t ep page erase and programming time 20 20 ms t p page programming time 14 14 ms t pe page erase time 8 8 ms t be block erase time 12 12 ms t rst reset pulse width 10 10 s t rec reset recovery time 1 1 s
14 2225j?dflsh?2/08 at45db081b input test waveforms and measurement levels t r , t f < 3 ns (10% to 90%) output test load ac waveforms two different timing diagrams are shown below. waveform 1 shows the sck signal being low when cs makes a high-to-low transition, and wa veform 2 shows the sck signal being high when cs makes a high-to-low transition. both wavefo rms show valid timing diagrams. the setup and hold times for the si signal are referenced to the low-to-high transition on the sck signal. waveform 1 shows timing that is also compatib le with spi mode 0, and waveform 2 shows tim- ing that is compatible with spi mode 3. waveform 1 ? inactive clock polarity low and spi mode 0 waveform 2 ? inactive clock polarity high and spi mode 3 ac driving levels ac measurement level 0.45v 2.0 0.8 2.4v device under test 30 pf cs sck si so t css valid in t h t su t wh t wl t csh t cs t v high impedance valid out t ho t dis high impedance cs sck si so t css valid in t h t su t wl t wh t csh t cs t v high z valid out t ho t dis high impedance
15 2225j?dflsh?2/08 at45db081b reset timing (inactive clock polarity low shown) note: the cs signal should be in the high state before the reset signal is deasserted. command sequence for read/write operat ions (except status register read) notes: 1. ?r? designates bits reserved for larger densities. 2. it is recommended that ?r? be a logical ?0 ? for densities of 8m bits or smaller. 3. for densities larger than 8m bits, the ?r? bits become the most si gnificant page address bit for the appropriate density. cs sck reset so high impedance high impedance si t rst t rec t css si cmd 8 bits 8 bits 8 bits msb reserved for larger densities page address (pa11-pa0) byte/buffer address (ba8-ba0/bfa8-bfa0) lsb r r r x x x x x x x x x x x x x x x x x x x x x
16 2225j?dflsh?2/08 at45db081b write operations the following block diagram and waveforms illust rate the various write sequences available. main memory page program through buffers buffer write buffer to main memory page program (data from buffer programmed into flash page) flash memory array page (256 bytes) buffer 2 (256 bytes) buffer 1 (256 bytes) i/o interface si buffer 1 to page program page program through buffer 2 buffer 2 to page program page program through buffer 1 buffer 1 write buffer 2 write si cmd n n+1 last byte completes writing into selected buffer starts self-timed erase/program operation cs rrr, pa11-7 pa6-0, bfa8 bfa7-0 si cmd x xx, bfa8 bfa7-0 n n+1 last byte completes writing into selected buffer cs si cmd rrr, pa11-7 pa6-0, x cs starts self-timed erase/program operation x each transition represents 8 bits and 8 clock c y cles n = 1st byte read n+1 = 2nd byte read
17 2225j?dflsh?2/08 at45db081b read operations the following block diagram and waveforms illust rate the various read sequences available. main memory page read main memory page to buffer transfer (data from flash page read into buffer) buffer read flash memory array page (264 bytes) buffer 2 (264 bytes) buffer 1 (264 bytes) i/o interface main memory page to buffer 1 main memory page to buffer 2 main memory page read buffer 1 read buffer 2 read so si cmd rrr, pa11-7 pa6-0, ba8 ba7-0 x xxx cs n n+1 so si cmd rrr, pa11-7 pa6-0, x x starts reading page data into buffer cs so si cmd x xx, bfa8 bfa7-0 cs n n+1 so x each transition represents 8 bits and 8 clock c y cles n = 1st byte read n+1 = 2nd byte read
18 2225j?dflsh?2/08 at45db081b detailed bit-level read timing ? inactive clock polarity low continuous array read (opcode: 68h) main memory page read (opcode: 52h) si 0 1xx cs so sck 12 63 64 65 66 67 68 high-impedance d 7 d 6 d 5 d 2 d 1 d 0 d 7 d 6 d 5 data out bit 0 of page n+1 bit 2111 of page n lsb msb t su t v si 0 1 0 10 xxx cs so sck 12345 60 61 62 63 64 65 66 67 xx high-impedance d 7 d 6 d 5 data out command opcode msb t su t v
19 2225j?dflsh?2/08 at45db081b detailed bit-level read timing ? inactive clock polarity low (continued) buffer read (opcode: 54h or 56h) status register read (opcode: 57h) si 0 1 0 10 xxx cs so sck 12345 36 37 38 39 40 41 42 43 xx high-impedance d 7 d 6 d 5 data out command opcode msb t su t v si 0 1 0 10 111 cs so sck 12345 78910 11 12 16 17 high-impedance d 7 d 6 d 5 status register output command opcode msb t su t v 6 d 1 d 0 d 7 lsb msb
20 2225j?dflsh?2/08 at45db081b detailed bit-level read timing ? inactive clock polarity high continuous array read (opcode: 68h) main memory page read (opcode: 52h) si 0 1xxx cs so sck 12 63 64 65 66 67 high-impedance d 7 d 6 d 5 d 2 d 1 d 0 d 7 d 6 d 5 bit 0 of page n+1 bit 2111 of page n lsb msb t su t v data out si 0 1 0 10 xxx cs so sck 12345 61 62 63 64 65 66 67 xx high-impedance d 7 d 6 d 5 data out command opcode msb t su t v d 4 68
21 2225j?dflsh?2/08 at45db081b detailed bit-level read timing ? inactive clock polarity high (continued) buffer read (opcode: 54h or 56h) status register read (opcode: 57h) si 0 1 0 10 xxx cs so sck 12345 37 38 39 40 41 42 43 xx high-impedance d 7 d 6 d 5 data out command opcode msb t su t v d 4 44 si 0 1 0 10 111 cs so sck 12345 78910 11 12 17 18 high-impedance d 7 d 6 d 5 status register output command opcode msb t su t v 6 d 4 d 0 d 7 lsb msb d 6
22 2225j?dflsh?2/08 at45db081b detailed bit-level read timing ? spi mode 0 continuous array read (opcode: e8h) main memory page read (opcode: d2h) si 1 1xxx cs so sck 12 62 63 64 65 66 67 high-impedance d 7 d 6 d 5 d 2 d 1 d 0 d 7 d 6 d 5 data out bit 0 of page n+1 bit 2111 of page n lsb msb t su t v si 1 1 0 10 xxx cs so sck 12345 60 61 62 63 64 65 66 67 xx high-impedance d 7 d 6 d 5 data out command opcode msb t su t v d 4
23 2225j?dflsh?2/08 at45db081b detailed bit-level read timing ? spi mode 0 buffer read (opcode: d4h or d6h) status register read (opcode: d7h) si 1 1 0 10 xxx cs so sck 12345 36 37 38 39 40 41 42 43 xx high-impedance command opcode t su d 7 d 6 d 5 data out msb t v d 4 si 1 1 0 10 111 cs so sck 12345 78910 11 12 16 17 high-impedance status register output command opcode msb t su 6 d 1 d 0 d 7 lsb msb d 7 d 6 d 5 t v d 4
24 2225j?dflsh?2/08 at45db081b detailed bit-level read timing ? spi mode 3 continuous array read (opcode: e8h) main memory page read (opcode: d2h) si 1 1xxx cs so sck 12 63 64 65 66 67 high-impedance d 7 d 6 d 5 d 2 d 1 d 0 d 7 d 6 d 5 bit 0 of page n+1 bit 2111 of page n lsb msb t su t v data out si 1 1 0 10 xxx cs so sck 12345 61 62 63 64 65 66 67 xx high-impedance d 7 d 6 d 5 data out command opcode msb t su t v d 4 68
25 2225j?dflsh?2/08 at45db081b detailed bit-level read timing ? spi mode 3 (continued) buffer read (opcode: d4h or d6h) status register read (opcode: d7h) si 1 1 0 10 xxx cs so sck 12345 37 38 39 40 41 42 43 xx high-impedance d 7 d 6 d 5 data out command opcode msb t su t v d 4 44 si 1 1 0 10 111 cs so sck 12345 78910 11 12 17 18 high-impedance d 7 d 6 d 5 status register output command opcode msb t su t v 6 d 4 d 0 d 7 lsb msb d 6
26 2225j?dflsh?2/08 at45db081b figure 1. algorithm for sequentially programmin g or reprogramming the entire array notes: 1. this type of algorithm is used fo r applications in which the entire array is programmed sequentially, filling the array page-by- page. 2. a page can be written using either a ma in memory page program operation or a bu ffer write operation followed by a buffer to main memory page program operation. 3. the algorithm above shows the programmin g of a single page. the algorithm will be repeated sequ entially for each page within the entire array. start main memory page program through buffer (82h, 85h) end provide address and data buffer write (84h, 87h) buffer to main memory page program (83h, 86h)
27 2225j?dflsh?2/08 at45db081b figure 2. algorithm for randomly modifying data notes: 1. to preserve data integrity, each page of a dataflash se ctor must be updated/rewritten at least once within every 10,000 cumulative page erase/program operations. 2. a page address pointer must be maintain ed to indicate which page is to be re written. the auto page rewrite command must use the address specified by the page address pointer. 3. other algorithms can be used to rewrite portions of the flash array. low-power appl ications may choose to wait until 10,000 cumulative page erase/program operations have accumulated before rewriting all pages of the sector. see application note an-4 (?using atmel?s serial dataflash?) for more details. sector addressing pa1 1 pa1 0 pa9 pa8 pa7 pa6 pa5 pa4 pa3 pa2 - pa 0 s ect o r 000000000x0 0000 xxxxxx1 0001 xxxxxx2 0 0 1xxxxxxx3 1 0 0xxxxxxx6 1 0 1xxxxxxx7 1 1 0xxxxxxx8 1 1 1xxxxxxx9 start main memory page to buffer transfer (53h, 55h) increment page address pointer (2) auto page rewrite (2) (58h, 59h) end provide address of page to modify if planning to modify multiple bytes currently stored within a page of the flash array main memory page program through buffer (82h, 85h) buffer write (84h, 87h) buffer to main memory page program (83h, 86h)
28 2225j?dflsh?2/08 at45db081b note: green packages cover lead-free requirements. ordering information f sck (mhz) i cc (ma) ordering code package operation range active standby 20 10 0.01 at45db081b-cc at45db081b-cnc at45db081b-rc at45db081b-tc 14c1 8cn3 28r 28t commercial (0 c to 70 c) 20 10 0.01 at45db081b-ci at45db081b-cni at45db081b-ri at45db081b-ti 14c1 8cn3 28r 28t industrial (-40 c to 85 c) 15 10 0.01 at45db081b-cc-2.5 at45db081b-cnc-2.5 at45db081b-rc-2.5 at45db081b-tc-2.5 14c1 8cn3 28r 28t commercial (0 c to 70 c) 2.5v to 3.6v green packaging options (pb/halide-free) f sck (mhz) i cc (ma) ordering code package operation range active standby 20 10 0.01 at45db081b-cnu at45db081b-ru at45db081b-tu at45db081b-cu 8cn3 28r 28t 14c1 industrial (-40 c to 85 c) package type 14c1 14-ball (3 x 5 array), plastic ch ip-scale ball grid array (cbga) 8cn3 8-pad (6 mm x 8 mm ) chip array sm all outline no lead package (cason ) 28r 28-lead, 0.330" wide, plastic gull wing small outline package (soic) 28t 28-lead, plastic thin small outline package (tsop)
29 2225j?dflsh?2/08 at45db081b packaging information 14c1 ? cbga 2325 orchard parkway san jose, ca 95131 title drawing no. r rev. 14c1 , 14-ball (3 x 5 array), 4.5 x 7 x 1.4 mm body, 1.0 mm ball pitch chip-scale ball grid array package (cbga) a 14c1 04/11/01 dimensions in millimeters and (inches). controlling dimension: millimeters. a b c d e 321 4.0 (0.157) 1.25 (0.049) ref 0.46 (0.018) dia ball typ 2.0 (0.079) 7.10(0.280) 6.90(0.272) 1.40 (0.055) max 0.30 (0.012)min 4.60(0.181) 4.40(0.173) 1.00 (0.0394) bsc non-accumulative 1.50 (0.059) ref a1 id 1.00 (0.0394) bsc non-accumulative top view side view bottom view
30 2225j?dflsh?2/08 at45db081b 8cn3 ? cason 2325 orchard parkway san jose, ca 95131 title drawing no. r rev. 8cn3, 8-pad (6 x 8 x 1.0 mm body), lead pitch 1.27 mm, chip array small outline no lead package (cason) b 8cn3 7/10/03 notes: 1. all dimensions and tolerance conform to asme y 14.5m, 1994. 2. the surface finish of the package shall be edm charmille #24-27. 3. unless otherwise specified tolerance: decimal 0.05, angular 2 o . 4. metal pad dimensions. common dimensions (unit of measure = mm) symbol min nom max note a 1.0 a1 0.17 0.21 0.25 b 0.41 typ 4 d 7.90 8.00 8.10 e 5.90 6.00 6.10 e 1.27 bsc e1 1.095 ref l 0.67 typ 4 l1 0.92 0.97 1.02 4 pin1 pad corner marked pin1 indentifier 0.10 mm typ 4 3 2 1 5 6 7 8 top view l b e l1 e1 side view a1 a bottom view e d
31 2225j?dflsh?2/08 at45db081b 28r ? soic a 2. 3 9 ? 2.79 a1 0.050 ? 0. 3 56 d 1 8 .00 ? 1 8 .50 note 1 e 11.70 ? 12.50 e1 8 .59 ? 8 .79 note 1 b 0. 3 56 ? 0.50 8 c 0.20 3 ? 0. 3 05 l 0.94 ? 1.27 e 1.27 typ pin 1 0o ~ 8 o 2 3 25 orch a rd p a rkw a y sa n jo s e, ca 951 3 1 title drawing no. r rev. 2 8 r, 2 8 -le a d, 0. 33 0" body width, pl as tic g u ll wing s m a ll o u tline ( s oic) c 2 8 r 5/1 8 /2004 common dimen s ion s (unit of me asu re = mm) s ymbol min nom max note a e c a 1 e 1 e d l b note: 1. dimen s ion s d a nd e1 do not incl u de mold fl as h or protr us ion. mold fl as h or protr us ion s h a ll not exceed 0.25 mm (0.010").
32 2225j?dflsh?2/08 at45db081b 28t ? tsop 2325 orchard parkway san jose, ca 95131 title drawing no. r rev. 28t , 28-lead (8 x 13.4 mm) plastic thin small outline package, type i (tsop) c 28t 12/06/02 pin 1 0o ~ 5o d1 d pin 1 identifier area b e e a a1 a2 c l gage plane seating plane l1 common dimensions (unit of measure = mm) symbol min nom max note notes: 1. this package conforms to jedec reference mo-183. 2. dimensions d1 and e do not include mold protrusion. allowable protrusion on e is 0.15 mm per side and on d1 is 0.25 mm per side. 3. lead coplanarity is 0.10 mm maximum. a ? ? 1.20 a1 0.05 ? 0.15 a2 0.90 1.00 1.05 d 13.20 13.40 13.60 d1 11.70 11.80 11.90 note 2 e 7.90 8.00 8.10 note 2 l 0.50 0.60 0.70 l1 0.25 basic b 0.17 0.22 0.27 c 0.10 ? 0.21 e 0.55 basic
2225j?dflsh?2/08 headquarters international atmel corporation 2325 orchard parkway san jose, ca 95131 usa tel: 1(408) 441-0311 fax: 1(408) 487-2600 atmel asia room 1219 chinachem golden plaza 77 mody road tsimshatsui east kowloon hong kong tel: (852) 2721-9778 fax: (852) 2722-1369 atmel europe le krebs 8, rue jean-pierre timbaud bp 309 78054 saint-quentin-en- yvelines cedex france tel: (33) 1-30-60-70-00 fax: (33) 1-30-60-71-11 atmel japan 9f, tonetsu shinkawa bldg. 1-24-8 shinkawa chuo-ku, tokyo 104-0033 japan tel: (81) 3-3523-3551 fax: (81) 3-3523-7581 product contact web site www.atmel.com technical support dataflash@atmel.com sales contact www.atmel.com/contacts literature requests www.atmel.com/literature disclaimer: the information in this document is provided in connection with atmel products. no lice nse, express or imp lied, by estoppel or otherwise, to any intellectual property right is granted by this document or in connection with the sale of atmel products. except as set forth in atmel?s terms and condi- tions of sale located on atmel?s web site , atmel assumes no liability whatsoever and disclaims any express, implied or statutor y warranty relating to its product s including, but not limited to, the implied wa rranty of merchantability, fitness for a particu lar purpose, or non-infringement. in no event shall atmel be liable for any direct, indire ct, consequential, punitive, special or i nciden- tal damages (including, without limitation, damages for loss of pr ofits, business interruption, or loss of information) arising out of the use or inability to use this document, even if atmel has been advised of th e possibility of such damages. atmel makes no representations or warranties with re spect to the accuracy or comple teness of the contents of this document and reserves the rig ht to make change s to specifications and product descriptions at any time withou t notice. atmel does not make any commitmen t to update the information contained her ein. unless specifically provided otherwise, atmel products are no t suitable for, and shall not be used in, automotive applicatio ns. atmel?s products are not int ended, authorized, or warranted for use as components in applications in tended to support or sustain life. ? 2008 atmel corporation. all rights reserved. atmel ? , logo and combinations thereof, everywhere you are ? , dataflash ? and others, are regis- tered trademarks or trademarks of atmel corporation or its subs idiaries. other terms and product names may be trademarks of oth ers.

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